Datasheet Details
| Part number | N04Q1618C2B |
|---|---|
| Manufacturer | AMI SEMICONDUCTOR |
| File Size | 328.02 KB |
| Description | 4Mb Ultra-Low Power Asynchronous CMOS SRAM |
| Datasheet |
 N04Q1618C2B Datasheet
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General Description
Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VCCQ VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Core Power Po
Key Features
- Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V.
- Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ.
- Very low standby current 50nA typical for 1.2V operation.
- Very low operating current 400µA typical for 1.2V operation at 1µs.
- Very low Page Mode operating current 80µA typical for 1.2V operation at 1µs.
- Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enabl.